Method for lithographic processing on molecular monolayer and multilayer thin films

ABSTRACT

Methods for making electronic devices where a molecular monolayer or multilayer is sandwiched between top and bottom electrodes at electrode intersections. The molecular layer has an electrical characteristic such as bistable switching. A layer of electrically conductive material is used to protect the molecular layer during formation of the top electrode pattern. The electrically conductive material remains sandwiched between the top and bottom electrodes at the electrode intersections in the final electronic device.

This invention was made with Government support under Contract No.DABT63-9-3-0003, awarded by the U.S. Army. The Government has certainrights in this invention.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to molecular electronic devicesthat can be utilized for memory storage, logic circuitry or signalrouting. More specifically, the present invention relates to improvedmethods for making such devices wherein the critical dimensions of thedevices are measured in nanometers.

2. Description of Related Art

Molecular electronic devices have been demonstrated to be capable ofperforming many of the same tasks that are commonly performed bysemiconductor (e.g. silicon, gallium arsenide, etc.) devices. Thesetasks include signal rectification, signal switching and simple logicfunctions. Such devices are described in: “Molecular Wire CrossbarLogic” (U.S. Ser. No. 09/282,045); “Molecular Wire CrossbarInterconnect” (U.S. Ser. No. 09/280,225); “Demultiplexer for a MolecularWire Crossbar Network” (U.S. Ser. No. 09/282,049); “ChemicallySynthesized and Assembled Electronic Devices” (U.S. Ser. No.09/292,767); and “Electrically Addressable Volatile and Non-VolatileMolecular Based Switching Devices (U.S. Ser. No. 09/459,246). Molecularelectronic devices are also described in U.S. Pat. Nos. 6,128,214 and6,159,620.

An advantage of molecular electronic devices is that the deviceperformance characteristics originate from molecular properties. Thishas several implications. First, it means that the devices canpotentially scale down in size to nanometer dimensions withoutsignificant change in device performance. Second, it also means that theunique electronic properties that can be designed into molecularstructures can also be designed into solid state devices. Theseadvantages are not characteristic of semiconductor devices. However,many molecular electronic devices that have been fabricated to dateinvolve fairly awkward device processing steps. As one example of thisawkward processing, electrical connections to the molecules are oftenevaporated through contact shadow masks, meaning that a thin metal foilthat has been previously patterned with holes of various shapes isplaced in contact with the molecular thin film and metal electrodes aredeposited by directing a metal vapor through the open pattern. Thistechnique has serious limitations in terms of the size resolution andcomplexity of electrode patterns that can be deposited. For example, itis very difficult and expensive to fabricate shadow masks that havepatterned features that are smaller than a couple of micrometers insize.

As a second example of the current art that is utilized for molecularelectronic devices, a nanometer scale wire is defined using electronbeam lithography and great effort is made to fabricate a wire that has avery thin cross-section. The wire is then “broken” in a manner similarto how a fuse is blown. Under appropriate conditions, the brokenjunction can be designed to have a gap that is of molecular dimensions,so that molecules can be chemically attached to bridge across thejunction. Once again, while it is possible to make electrical contact tothe molecules in this way, the device processing steps are just awkward,and the performance characteristics of such a device are difficult toreproduce across many devices.

Nevertheless, the above-described procedures have been developedbecause, while at thin film of organic molecules may have desirablecharacteristics for electronic device applications, it is also aninherently delicate film. This is because such a film may melt, flow, orbe otherwise damaged by low-temperature processing steps such as thespin-coating of a photolithographic resist materials. A set ofprocessing techniques for dealing with such films have not beendeveloped. It would be desirable to provide improved processingtechniques that would eliminate the problems associated with existingprocessing technology and allow the production of molecular electronicdevices having electrode patterns with nanometer scale dimensions.

DEFINITIONS. The following definitions apply to the present invention:

“Mol-RAM” in this context refers to molecular-switch based array ofmemory cells.

“Molecular electronic devices” in this context refers to devices inwhich some critical component of the device, such as the wire or theswitch, is a molecule or a collection of molecules.

A “memory bit” in this context refers to a physical device that canexist in two states (‘0’ or ‘1’) that can be distinguished from oneanother by electrically probing the device.

“Lithographic processing” in this context refers to any procedure inwhich light or electron beams are used to produce a chemically ormaterially differentiated pattern onto a substrate.

A “switch” in this context refers to a physical device that can switchbetween two states, such as ‘open’ and ‘closed,’ and the differencebetween the two states can be probed electrically. The differencebetween the two states of a switch is typically greater than for amemory bit. For example, if the electrical property that is measured todetermine the state of the switch is the resistance of the device, thena memory bit may be characterized by a 20% change in resistance, while aswitch may be characterized by a 200% change in resistance. A switch canbe used as a memory bit, but a memory bit may not necessarily be usefulas a switch.

“Self-assembled” in this context refers to a system that naturallyadopts some geometric pattern because of the identity of the componentsof the system; the system achieves at least a local minimum in itsenergy by adopting this configuration. For example, a self-assembledmolecular monolayer is a geometrically arranged monolayer film ofmolecules that is formed when certain molecules chemically bind to acertain surface. The organization of such a self-assembled monolayer iscontrolled by both the geometric registry of the molecules with theatomic structure of the underlying surface, as well as the interactionsbetween neighboring molecules in the monolayer.

“Singly configurable” in this context means that a switch can change itsstate only once via an irreversible process such as oxidation orreduction reaction; such a switch can be the basis of a programmableread only memory (PROM), for example.

“Reconfigurable” in this context means that a switch can change itsstate multiple times via a reversible process such as an oxidation orreduction; in other words the switch can be opened and closed multipletimes, e.g., the memory bits in a random access memory (RAM).

A “crosspoint memory” in this context means a memory circuit thatconsists of a grid of crossed wires. At each junction of the grid is amemory bit, in which some material, such as switching molecules, aresandwiched between the electrodes. The ‘0’ or ‘1’ state of the memorybit may be set electrically, and that state of the memory bit may beprobed electrically. The electrical setting or probing of the bit iscarried out by electrically addressing the two wires of the crosspointmemory that form the intersection.

“Redox active” in this context means that a molecule or molecularjunction can be electrochemically reduced or oxidized, meaning thatelectrical charge can be added or taken away from the molecules ormolecular junction.

A “wetting film” in this context refers to a film that completely anduniformly covers another film. This term does not imply that the wettingfilm is liquid, it only refers to how the wetting film coats anunderlying substrate. If a top material does not uniformly wet a bottommaterial, then that top material will instead form islands and patchesof coverages.

“Micron-scale dimensions” refers to dimensions that range from 1micrometer to a few micrometers in size.

“Sub-micron scale dimensions” refers to dimensions that range from 1micrometer down to 0.04 micrometers.

“Nanometer scale dimensions” refers to dimensions that range from 1nanometers up to 50 nanometers (0.05 micrometers).

“Micron-scale wires” and “submicron-scale wires” refers to rod orribbon-shaped conductors of semiconductors with widths or diametershaving the dimensions of 1 to 10 micrometers, heights that can rangefrom a few tens of nanometers to a micrometer, and lengths of severalmicrometers and longer.

“Hysteresis” in this context refers to the character of acurrent-voltage measurement such that the forward voltage trace(negative to positive voltage) is characterized by a different currentflow than the reverse voltage trace (positive to negative voltage).V_(LH) refers to the low voltage end of the hysteresis loop, and V_(HH)refers to the high voltage end of the current loop. V_(MH) is a voltagevalue somewhere between V_(LH) and V_(HH).

“Non-destructive read” in this context refers to the operation of amemory cell such that the information in the cell can be read out(accessed) without affecting the status of the memory bit.

A “short” or a “shorted device” in this context refers to an unintendedfixed electrical connection between various components of a device, orbetween various devices.

A “circuit” in this context refers to several interconnected devicesthat together perform some task, such as a logical operation, memorystorage, or signal routing.

SUMMARY OF THE INVENTION

In accordance with the present invention, a method is provided formaking molecular electronic devices which is an improvement overexisting fabrication techniques. The method is suitable for producingmolecular electronic devices where the various electronic structureshave micron to submicron to nanometer scale dimensions.

The method involves providing a substrate having a surface on which islocated a first electrode pattern. Bistable switching molecules, or someother molecules with a desirable electronic characteristic, aredeposited onto the substrate surface to form a molecular layer thatcovers the substrate surface including the first electrode pattern. As afeature of the present invention, an electrically conductive material isdeposited onto the molecular layer to form an electrically conductiveprotective layer that serves to protect the underlying molecular layer.The protective layer allows one to use lithography or other conventionalpatterning techniques, such as stamping or imprinting, to form a secondelectrode pattern on the surface of the protective layer withoutdamaging the underlying molecules. The ability to use lithography andother related patterning techniques makes it possible to fabricatecomplex circuit patterns and to form a second electrode pattern abovethe first that has dimensions that are only limited by the lithographyor patterning approach.

The second electrode pattern is formed on the protective layer so thatthe second electrode pattern overlaps the first electrode pattern toform at least one electrode intersection. The protective layer is thenremoved at the locations which remain exposed after formation of thesecond electrode pattern to form at least one electrode intersectionwhere the molecular switching layer and electrically conductiveprotective layer are sandwiched between the first and second electrodepatterns. The electrically conductive protective layer at eachintersection forms an integral part of the second electrode. Selectiveremoval of the conductive protective layer from those areas that are notlocated under the second electrode pattern is necessary in order tolimit electrical conductivity to the electrodes and electrodeintersections. Without this step, an electrical short might existbetween the top and bottom electrodes, and if a circuit has beenfabricated, then the various devices within the circuit might also beshorted to one another.

The present invention is not only directed to a method for makingmolecular electronic devices, but also covers the devices themselves.Such devices include a substrate having a surface on which is located abottom electrode pattern having an interior surface. A top electrodepattern having an interior surface is provided wherein the top electrodepattern overlaps said bottom electrode pattern to form at least oneelectrode intersection located between the interior surfaces of thefirst and second electrode patterns. Sandwiched between these twoelectrodes are two layers. The lower layer, which consists of moleculesthat have unique electrical properties, such as a bistable switchingcharacteristic, is situated on top of the bottom electrode. The upperlayer is an electrically conductive protective material, and this layerprovides an interface between the molecular layer and the top electrodepattern. The resulting device includes one or more electrodeintersections or switches wherein the molecules and electricallyconductive protective material are sandwiched between the first andsecond electrode patterns.

The present invention also is directed to the intermediate assembliesthat are fabricated during the various steps of the manufacturingprocess. For example, the invention covers the assembly prior toformation of the second electrode pattern on the electrically conductiveprotective layer. The assembly includes a substrate comprising a surfaceon which is located a first electrode pattern. A layer of molecules,such as bistable switching molecules, is provided which has beendeposited onto the substrate surface to form a molecular layer thatcovers the substrate surface including the first electrode pattern. Theassembly further includes a layer of electrically conductive materialthat has been deposited onto the molecular switching layer to form anelectrically conductive protective layer. This protective layer has anexposed surface on which the second electrode pattern may be formed bylithograhy or other high resolution technique used for fabricatingelectrode patterns having dimensions that are limited only by thelithographic technique, and thus may be scaled to nanometer dimensions.

The above discussed and many other features and attendant advantages ofthe present invention will become better understood by reference to thefollowing detailed description when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic representation of the steps of the presentinvention involving: forming the molecular switching layer of bistablemolecules on a first electrode pattern located on a substrate; forming aconductive protective layer on top of the switching layer; and applyinga lithographic resist layer on top of the protective layer.

FIG. 2 is a schematic representation of further steps of the presentinvention involving: removing resist to define a second electrodepattern; depositing electrode material onto the protective layer asdefined by the resist pattern; and removing the resist.

FIG. 3 is a schematic representation of the step of the inventioninvolving removing the protective layer from those areas not underlyingthe second electrode pattern to form a simple molecular electronicdevice in accordance with the present invention.

FIG. 4 is a diagram of a finished device stack.

FIG. 5 shows the chemical structures of exemplary bistable molecules.

FIG. 6 shows micrographs of exemplary sub-micron-scale molecular switchtunnel junction devices fabricated according to the present invention.

FIG. 7 is a graph showing the remnant molecular signature (hysteresisloop) of an exemplary molecular electronic device in accordance with thepresent invention.

FIG. 8 is a graph showing several cyclings of an exemplary molecularelectronic device through its hysteresis loop.

FIG. 9 is a graph showing the remnant signature (hysteresis loop) of anexemplary molecular electronic device in accordance with the presentinvention.

FIG. 10 is a graph showing several cyclings of an exemplary molecularelectronic device, as well as a control (non-switching) device, that wasfabricated in accordance with the present invention.

FIG. 11 the operation of 3-bits of an exemplary molecular switch tunneljunction crosspoint memory circuit containing 16 individual devices inaccordance with the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The method of the present invention is well suited for use in making awide variety of molecular electronic devices wherein optical, electronor ion beam lithography is used to form the electrode patterns. The termelectrode patterns as used herein refers to all types of electricallyconductive structures used in molecular electronic devices includingmolecular switch tunnel junctions, molecular switch cross-point memorycircuits and molecular switch logic circuits.

The method allows one to use standard lithographic processing and otherpatterning techniques on a single monolayer film or afew-multilayer-thick film of molecules. The process must not destroy thedesirable electrical characteristics of the molecular layer, and mustenable the exploitation of the unique electrical properties of themolecules in a solid-state device. In general, the organic molecularfilms in question do not possess the material characteristics ofsemiconductor thin films for example, and this means that, unlessspecial care is taken, certain lithographic processing steps may degradethe molecular monolayer of interest. For example, photoresist is oftendeposited onto a substrate via a technique known as spin coating. Inthat technique, the fluid photoresist, containing a spreading solvent,is applied on top of a wafer. The solvent evaporates, leaving a film ofphotochemically active resist material. This process is routinelycarried out on both semiconductor and metallic thin films. However, ifthis process is carried out on a molecular thin film, it is possible andeven likely that the solvent will disrupt or destroy the molecular thinfilm.

The present invention seeks to protect the molecular thin film fromthese and other processing steps by depositing a very thin, protectivelayer of a metal that wets and adheres to the molecular thin film, andmakes a good electrical contact to the molecular film. All of theprocessing steps are subsequently carried out directly on thisprotective layer. After the lithographic processing has been completedand all wiring connections have been established, the protective layeris selectively removed via a selective wet or dry etching process.

Referring to FIGS. 1-3, an exemplary method is diagrammatically setforth for making a molecular electronic device in accordance with thepresent invention. As shown in FIG. 1 at A, electrodes 12 have beenpatterned on an insulated substrate 11. The insulated substrate 11includes a substrate and an insulating device that is covered with aconducting material from which the bottom electrodes 12 can bepatterned. The substrate can be made from any number of conducting orinsulating materials, including silicon nitride, sapphire, silicondioxide in the form of glass or quartz, silicon, gallium arsenide, orpolymeric materials. The insulating surface or film on which electrodes12 are patterned must be insulating. If the substrate is insulating,then the same material can be used to form the insulating film. If thesubstrate is conducting, such as would be the case for a silicon wafer,then the film must be insulating to prevent electrical connection offinal devices to the underlying substrate. On top of insulated substrate11 is deposited a conducting film from which are patterned the bottomelectrodes 12. Patterning techniques can range from optical andelectron-beam lithography to various imprinting techniques that areknown from the literature. Once the bottom electrodes 12 are defined, amolecular layer or film 13 is deposited. The film 13 may be depositedover the entire wafer (see FIG. 1 at B).

The molecular film 13 must coat the surface of the bottom electrodes 12,but it can also coat the rest of the substrate surface 11. The moleculesin the molecular layer 13 are designed to yield a specific electricalcharacteristic, such as bistable switching, charge storage (capacitors),signal rectification (diodes), signal dissipation (resistors) or signalinversion (negative differential resistance). The molecular layer 13 ispreferably deposited as a single layer of molecules or as a layer thatis only a few molecules thick. As a feature of the present invention, anelectrically conductive material is deposited onto the molecular layer13 to form an electrically conductive protective layer 14 (see FIG. 1 atC). The molecular may be deposited as a Langmuir film orLangmuir-Blodgett multilayer (see C. L. Brown et al., “The Introductionof [2]Catenanes Into Langmuir Films and Langmuir-Blodgett Multilayers-APossible Strategy For Molecular Information Storage Materials,”Langmuir, 2000 February 22, V16 N4:1924-1930.). The molecules may alsobe deposited via a chemical reaction that bonds some part of themolecule with the electrodes 12. The molecular layer 13 will preferablybe on the order of 1 nanometers to 10 nanometers thick and can be madefrom a wide variety of bistable switching molecules including rotaxanes,pseudorotaxanes, catenanes, spiropyrans, and other bistable molecularstructures.

The electrically conductive protective layer 14 may be made from anysuitable electrically conductive material which is capable of uniformlywetting the molecular layer 13 to form a thin protective film. Preferredexemplary metals are titanium and chromium. Various other metals andmetal alloys may be used provided that they are capable of conductingelectricity and providing a uniform thin film 14 on top of the molecularlayer 13 without damaging or otherwise adversely affecting theelectrical properties (such as bistable switching) molecular film 13.Metals and metal alloys that form strong metal-carbon chemical bonds,such as titanium, chromium, zirconium, niobium, and others are likely tobe excellent candidates for the protective film. Metals that form weakmetal-carbon chemical bonds are likely to be poor candidates. Thisprotective layer 14 will later be removed, and so it is important for itto be as thin as possible, while still existing as a film that uniformlycoats the molecular layer 13.

The next step involves forming a second electrode pattern on the exposedsurface of the protective layer 14. A second set of options is to usepatterning techniques that, while not as conventional, are alsowell-developed, and those patterning techniques include stamping (Deng,T; Wu, H K; Brittain, S T; Whitesides, G M. “Prototyping of masks,masters, and stamps/molds for soft lithography using an office printerand photographic reduction.” ANALYTICAL CHEMISTRY, 2000 July 15 V72N14:3176-3180.) and imprint techniques (Chou, S Y, Krauss, P R; Zhang,W; Guo, L J; and others, “Sub-10 nm imprint lithography andapplications,” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997November-December, V15 N6:2897-2904). Such procedures involve forming amasking, electron beam resist, or photoresist layer 16 that entirelycovers the electrically conductive protective layer 14 (see FIG. 1 atD). The layer 16 can be any of the known resist materials that aretypically applied by spin casting or of any of the polymeric materialsthat can be utilized for stamping or imprinting. The resist layer 16will range in thickness from 50 nanometers to 2 microns, as is requiredby established lithographic process techniques. Portions of the layer 16are removed by the preferred writing technique to form electrodelocations 17 (see FIG. 2 at A). Using preferred lithographic techniquesand an optimized resist layer thickness, the electrode location 18 canbe accurately made to nanometer scale dimensions.

The next step in lithographic formation of the second electrode patterninvolves depositing electrode material 18 into the electrode locations17 (see FIG. 2 at B). Many known deposition techniques may be utilized,although there is a general requirement, based on the stability ofmolecular materials in layer 13, that the deposition process not requiretemperatures in excess of 150 to 200° C. There may be some exceptions tothis requirement, because there are certain molecular materials that arestable at temperatures up to 400° C. However, that is not typical.Electron-beam evaporation, or sputtering deposition are suitabletechniques for depositing the electrode material 18. Suitable electrodematerials include metals such as aluminum, copper, gold, platinum,palladium, nickel, silver, cobalt, tin, iron and alloys thereof.Suitable electrode materials also include semiconductors such asamorphous silicon, silicon, polysilicon, gallium arsenide, or conductingdoped polymers such as appropriately doped poly(metaphenylenevinylene).It may be necessary to sequentially deposit two conducting materials toform the top electrodes 18, whereby the first material promotes adhesionof the second material. Titanium is often used for this application. Thefundamental limitation of the thermal stability of the molecular film 13implies that top electrode materials such as crystalline orpolycrystalline silicon, for example, are not appropriate, since suchfilms typically require high temperature processing. Preferably, thesecond or top electrodes 18 will be 20 nanometer thick or thicker. Aspreviously mentioned, a crossbar structure of electrode patterns isshown, but other devices and circuit geometries are possible, includingelectrode patterns that can form a highly complex pattern.

The resist layer 16 is removed using solvents or any other knownlithographic techniques for removing resist layers that will not destroythe desired device stack (see FIG. 2 at C). As can be seen, theelectrically conductive protective layer 14 extends across the entiresubstrate surface. As a result, the device in this state is electricallyinoperative since the protective layer 14 essentially shorts the entireset of devices. Accordingly, it is necessary to remove those portions ofthe protective layer 14 which do not lie directly under the electrodes18 (see FIG. 3). This is accomplished using etching procedures that areknown in the art, such as reactive ion etching recipes that employfluorine or chlorine gases as etchant molecules. Such etching procedureswill possibly remove any molecules located under the protective layerthat is being removed. It is important that the etching conditions becontrolled so that the lower electrodes 12, the top electrodes 18, andthe molecules 13 and conductive material 14 sandwiched between the twoelectrodes are not significantly damaged during the etching process.Damaging the electrodes or the remaining sandwiched molecules orconductive material can destroy or otherwise alter device performance.For example, a severely thinned lower electrode can greatly increase themeasured device resistance. Many etching recipes will lead to severeundercut of the lower electrode, and, while minor undercut may beacceptable, severe undercut is to be avoided.

As can be seen from the preceding description, the method of the presentinvention is well-suited for forming electrode patterns usingconventional lithographic and other patterning techniques wherein thesecond electrode pattern is formed onto the protective metal layer'supper surface rather than the more sensitive underlying molecularswitching layer.

Examples of practice are as follows:

In the following examples, the method of the present invention was usedto fabricate isolated molecular-based switching tunnel junctions,molecular-switch-based 16-bit random access memory circuits. For alldevices demonstrated, the molecular thin film was a single moleculethick film, i.e., a molecular monolayer.

The molecular thin films that were used to demonstrate this inventionwere fabricated from the switching molecules 37, 38. These switchingmolecules are bi-stable, and the switching mechanism is activated by theoxidation of the molecular complex. Other switching molecules 30, 36 areviable candidates as well, and come from the class of molecules known aspseudorotaxanes 30 and catenanes 36. In addition, other molecules thatcan be used to form the molecular layer include those which exhibit oneof the following electrical characteristics: charge storage (capacitor),signal rectification (diodes), signal dissipation (resistors) or signalinversion (negative differential resistance).

Both switching molecules 37 and 38 come from the general class ofmolecules known as [2]rotaxanes. A [2]rotaxane is a molecule consistingof two interlocked molecular components. This particular [2]rotaxane isan amphiphile, meaning that the top 31 of this molecule is hydrophobic,while the bottom is hydrophilic. The two components of the [2]rotaxanesconsist of a tetracationic cyclophane ring 34 encircling adumbbell-shaped molecular component. The dumbbell-shaped component hastwo distinct recognition sites 32 and 35 that provide binding sites forthe cyclophane ring 34. The bistability of these molecules ischaracterized by detailed chemical analysis of their dynamicalproperties in solution. At least some critical component of thatbistable switching character has been demonstrated to also be observedin solid-state switching devices such as are presented here. Whether thecyclophane ring binds at site 32 or site 35 depends on the oxidationstate of the entire [2]rotaxane molecular structure. The lowest energystate of [2]rotaxane 38 is the one in which the cyclophane ring 34 isassociated with site 32. When the [2]rotaxane 38 is oxidized, anelectron is removed from site 32, leaving a positive charge. The 4+charged cyclophane ring 34 is repelled by this charge, and moves downthe chain to sit at binding site 35. This bistability is the basis ofthe switching in this device. Other bistable switching molecules, knownas [2]pseudorotaxanes 30, for example and [2]catenanes 36 for example,as well as spiropyrans, have also been used successfully as switchingmolecules in the literature (Collier, JACS, 2001; Collier,ChemPhysChem2001), although the switching mechanisms for the spiropyranmolecules are different than for the other molecules described here.

The polycrystalline silicon thin films that were fashioned into bottomelectrodes were fabricated according to a previously-describedliterature procedure (C. P. Collier, G. Mattersteig, Y. Li, E. W. Wong,K. Beverly, J. Sampaio, F. Raymo, J. F. Stoddart, and J. R. Heath, “A[2]-Catenane Based Solid-State Electronically Reconfigurable Switch,”Science, 289, 1172-75 (2000)). This particular procedure leads to verysmooth electrodes, which are ideal for supporting the transfer of aLangmuir Blodgett molecular monolayer film and minimizing defects inthat film. The measured resistivity of the resultant n-dopedpolycrystalline silicon thin film was 0.02 ohms·cm.

Two sets of devices were prepared: Device Set I consisting of isolateddevices 40 and crosspoint circuits 50 and Device Set II consisting ofisolated devices 41 and crosspoint circuits 51 (see FIG. 6). Both setsof devices contained both isolated (single-junction) devices, as well ascrosspoint memory circuits, fabricated on the same wafer. The processingtechniques and materials components utilized for these two devices weresimilar, but not identical. Referring to FIG. 4, a silicon wafer 20 wascoated with a 0.1 micrometer thick SiO₂ film 21 on top of which wasgrown the previously described polysilicon thin film 22. The polysiliconfilm was utilized with the 1 nanometer thick native SiO₂ layer 23. ALangmuir Blodgett molecular monolayer 24 made of either 38 (Device I) or37 (Device II) was utilized as the switching component of the device. Atitanium protective conducting layer 25 was used. This protective, uponexposure to air, forms a native 1 nanometer thick oxide at the topsurface 26 that was not removed. The top electrodes were deposited witha thin titanium adhesion layer 27 followed by a thicker A1 top electrode(Device I) or a thicker nickel top electrode (Device II). The detailedpreparation of these devices is as follows:

Bottom electrodes were patterned from polycrystalline silicon thin filmusing the following procedure.

a. Spin coat PMMA on n-doped poly-silicon wafer. 4000 rpm for 45 secondswith 4% 950 PMMA in chlorobenzene

b. Bake for 20 minutes on hot plate at 180° C. E-beam write bottomelectrode pattern 400 μC/cm² area dose Develop pattern inmethylisobutylketone:isopropanol (MIBK:IPA), 1:3 for 60 seconds, 10seconds in IPA, rinse with water and dry with inert gas

c. Evaporate metal in electron-beam evaporator, 500 Å aluminum

d. Lift-off PMMA/aluminum in acetone overnight

e. RIE: CF₄:O₂, 5:1, 200 Watts for approximately 30 seconds (down tooxide layer)

f. Remove aluminum with PAE (phosphoric acid etchant) at 50° C. for 2minutes

Deposition of molecular monolayer and titanium protective layer

a. Clean the wafer with commercial (Aleg-brand) cleaner for 30 minutesat 85° C.

b. Distill chloroform from basic alumina

c. Clean the Langmuir trough, use buffered aqueous subphase (4.87×10⁻⁴Na₂CO₃/NaHCO₃ subphase starting from 18 MegaOhm, high purity water). Thebuffered subphase is necessary for the particular molecules that wereused, but it is, in general, not a requirement. The particular molecules(38 for Device I; 37 for Device II) used had some functional componentsthat could be oxidized by the combined exposure of the molecule to airand acid. An untreated, high purity aqueous subphase will be acidic, andso the high-pH is designed to protect those particular molecules.

d. Deposit molecule/chloroform solution to a pressure of approximately 1mN/m

e. Compress to 30 mN/m pressure (as measured by using the Wilhelmybalance of the Langmuir trough according to standard techniques) in thefollowing steps:

1-2 mN/m at 10 cm²/min compression rate

2-15 mN/n at 5 cm²/min compression rate

15-30 mN/m at 2 cm²/min compression rate

Allow to equilibrate at 30 mN/m for a few minutes

f. Raise sample at 1 mm/min to transfer Langmuir monolayer as aLangmuir-Blodgett film (16) on top of the electrodes.

g. Put wafer into vacuum chamber and evacuate for a few minutes toremove at least most of the water.

h. Deposit 100 Å titanium (e-beam evaporation) as protective layer

The following steps are the ones used to lithographically define anddeposit the top electrode, and then to develop that electrode patternand remove the protective metallic film that is not protected by the topelectrode pattern.

a. Spin coat PMMA (poly-methylmethacrylate) film (17) on n-dopedpoly-silicon wafer. 4000 rpm for 45 seconds with 4% 950 PMMA inchlorobenzene

b. Bake at 100° C. for 12 hours

c. E-beam write top electrode pattern, 550 micro Coulombs/cm² area dose

d. Develop pattern in MIBK:IPA (methylisobutylketone:isopropanol), 1:3for 60 seconds, 10 seconds in IPA, rinse with water and dry with inertgas

e. Evaporate top electrode metals, 50 Å Ti/1000 Å A1 (device I) or 50 ÅTi/750 Å Ni (Device II).

f. Lift off un-patterned PMMA in acetone for 1 hour.

g. It is now necessary to remove the buffer layer of metal, as thislayer will actually short all of the devices together. This layer mustbe removed selectively, without removing the top electrode or bottomelectrode materials.

h. Use reactive ion etching (RIE) with a chlorine (Cl₂) plasma to removeTi protective layer (Device I). Use reactive ion etching (RIE) and afluorine plasma to remove metallic protective layer (Device II).

i. The single devices etched by the fluorine plasma (40) or by thechlorine plasma (41) RIE process are now ready for testing.

j. The crossbar memory circuits etched by the fluorine (50) or chlorine(51) plasma RIE process are now ready for testing.

k. The conditions for the fluorine plasma etch were: (35 SCCM (standardcubic centimeters per minute) CF₄; 3 SCCM O₂; 0.15 Torr, 200 Wattspower; 60 to 90 seconds).

l. The conditions for the chlorine plasma etch were: Cl₂ gas at 2milliTorr pressure and 5 SCCM flow rate; Temperature=300 Kelvin; 80Watts power; 150 second etch time with endpoint detection using thereflected light of a helium neon laser.

Devices containing molecules 37, 38 were all fabricated in order todemonstrate switching devices based on this invention. Circuitscontaining molecules 37, 38 were fabricated in order to demonstratecrosspoint memory circuits based on the present invention. All devicemeasurements were carried out under standard laboratory conditions (roomtemperature, room pressure and an air environment).

The invention was further demonstrated using molecular switch tunneljunctions fabricated in a sandwich-type configuration, and usingelectron-beam lithography to fabricate devices that had electrodeintersections or active areas (the region where the electrodes overlap)of 0.01 to 0.0025 micrometers squared. The devices were fabricated usingeither n-doped polycrystalline silicon bottom electrodes, passivatedwith the native (1 nanometer thick) SiO₂ layer, and a Ti protectionlayer on top of the molecular thin film. Note that during the process inwhich the polysilicon bottom electrode was lithographically defined, analuminum film was deposited on top of that electrode to protect it fromthe etching process so that the rest of the polysilicon thin film couldbe removed. Energy dispersed x-ray analysis of the film was carried outto interrogate whether or not any aluminum remained on top of thiselectrode after the processing was complete and the aluminum removed. Noaluminum was found, but trace amounts may have remained that were belowthe detectable limit. As a set of control experiments, 0.01 micrometersquared isolated devices were also fabricated in accordance with theinvention using eicosanoic acid (C₂₀H₄₃CO₂H) as the molecular monolayer.Eicosanoic acid is not expected to yield any type of switchingsignature, and those devices did not yield any type of switchingsignature. These devices did yield a current-voltage response thatindicated that the eicosanoic acid was acting as a tunnel barrier tocurrent flow, implying that the eicosanoic acid monolayer survived theprocessing steps intact, and that the switching characteristics of theswitching devices presented here originate from a molecular property andnot from some artifact of the device fabrication processing. Theelectrical properties of this device are measured by connecting thebottom electrode to a voltage source, and the top electrode to a currentamplifier measuring device. The operational characteristics of thisdevice are best quantified by measuring the capacitance-free hystereticresponse of the device. If the device is an operating molecular switchtunnel junction device, then the hysteresis of the device indicates thevoltages at which the switch may be closed, opened, and read. In orderto measure the capacitance-free hysteresis of the device, an experimentsimilar to what is called a remnant polarization measurement inferroelectric switching devices is carried out. (R. E. Jones, Jr., etal., “Ferroelectric non-volatile memories for low-voltage, low-powerapplications,” Thin Solid Films, 270, 584-588 (1995).) For molecularswitch tunnel junction devices, this is called a measurement of theremnant molecular signature. In such a measurement, a ramped series ofvoltage pulses is applied across the two electrodes. For example, thevoltage pulses might follow the series (−2.0V, −1.95V, −1.9V . . . 0.0V. . . +1.95V, +2.0V, +1.95V . . . −1.95V, −2.0V). After each voltagepulse, a small bias (+0.1V, for example) is applied across the twoelectrodes, and the current is measured. In this way, the effect ofperturbing the device by applying a voltage is probed at a small,non-perturbing voltage in such a way that the measurement is insensitiveto the capacitance of the device. Such a measurement (FIG. 7 for DeviceI, FIG. 9 for Device II) reveals the hysteretic molecular signature ofthis device and indicates successful fabrication and operation of thedevice. The remnant molecular signature can be utilized to identify thevoltages necessary for closing (Vclose) 60, 80, opening (Vopen) 61, 81,or reading (Vread) 62, 82 the state of the device (see FIGS. 7 and 9).Once these voltages are known, then a second measurement in which thedevice is cycled between the open and closed states can be performed(see FIG. 8 for Device I and FIG. 10 for Device II). In thesemeasurements, the device is opened applying Vopen, and the state of thedevice is read for a few seconds by monitoring the current through thedevice at Vread. The device is then closed by applying Vclose, and thestate of the device is again read for a few seconds by monitoring thecurrent at Vread. This is done several times so the cycling of thedevice through open and close cycles can be monitored. Control devicesmade in an identical fashion as Device II, but using eicosanoic acid(C₁₉H₃₉CO₂H), as non-switching molecule, yielded no switching signature102. However, when the switching molecule 30 was used, a switchingresponse was observed 103. This indicates that the molecular switchingproperties survived the device fabrication process.

This device and its operational characteristics are advantageous in thefollowing way. If electrodes were evaporated through a separate shadowmask, the width of the electrodes would be limited to a micrometer orso, and the 100 nanometer wide and smaller electrodes used here wouldnot be possible.

As previously mentioned, this invention was also reduced to practice byfabricating 16-bit crosspoint memory circuits 50, 51. In order to testthe memory, connections to each of the individual wires were made, and arelay circuit was employed to apply voltage, monitor current, ground, orotherwise electrically connect each of the wires separately. Theelectrical properties of the memory are illustrated in FIG. 11. Allmolecular switches were electrically set to their open state 100, and avoltage was applied across certain of the bits 101 so that those bitswere set to the switch-closed state. The current was then monitoredthrough those bits, and it was found that the switches had closed(current through the bits had increased). Switching molecule 38 was usedfor this memory.

Having thus described exemplary embodiments of the present invention, itshould be noted by those skilled in the art that the within disclosuresare exemplary only and that various other alternatives, adaptations andmodifications may be made within the scope of the present invention.Accordingly, the present invention is not limited to the above preferredembodiments and examples, but is only limited by the following claims.

What is claimed is:
 1. A molecular electronic device or circuitcomprising: a substrate comprising a surface on which is located a firstelectrode pattern having an interior surface; a second electrode patternhaving an interior surface wherein said second electrode patternoverlaps said first electrode pattern to form a plurality of electrodeintersections located between the interior surfaces of said first andsecond electrode patterns; a layer of electrically conductive protectivematerial that is located only on the interior surface of said secondelectrode pattern; and a layer of molecules having an electricalcharacteristic located adjacent to said layer of electrically conductivematerial wherein said one or more electrode intersections comprise saidmolecules and said electrically conductive protective materialsandwiched between said first and second electrode patterns.
 2. Amolecular electronic device according to claim 1 wherein said moleculeshave the electrical characteristic of bistable switching.
 3. A molecularelectronic device according to claim 1 wherein said first and secondelectrode patterns have nanometer scale dimensions.
 4. A molecularelectronic device or circuit in accordance with claim 1 wherein saidsubstrate comprises a material selected from the group consisting of anorganic polymer, silicon, germanium, gallium arsenide, silicon dioxide,or sapphire.
 5. A molecular electronic device or circuit in accordancewith claim 1 wherein said molecular layer comprises bistable switchingmolecules selected from the group consisting of rotoxanes, catenanes,and pseudorotaxanes.
 6. A molecular electronic device or circuit inaccordance with claim 1 wherein said electrically conductive materialwhich is used to form said protective layer is selected from the groupof metals consisting of titanium and chromium.
 7. A molecular electronicdevice or circuit in accordance with claim 1 wherein said molecularlayer is formed as a self-assembled molecular monolayer film or isformed as a Langmuir-Blodgett molecular monolayer or multilayer film oris deposited via vapor sublimination or vapor deposition.
 8. A molecularelectronic device or circuit in accordance with claim 1 wherein saidfirst electrode pattern is made from a material selected from the groupconsisting of aluminum, gold, silver, cobalt, iron, nickel, tin, copper,platinum, palladium and alloys thereof, and silicon, polysilicon,amorphous silicon, gallium arsenide and doped polymers.
 9. A molecularelectronic device or circuit in accordance with claim 1 wherein secondelectrode pattern is made from a material selected from the groupconsisting of aluminum, gold, silver, cobalt, iron, nickel, tin, copper,platinum, palladium and alloys thereof, and silicon, polysilicon,amorphous silicon, gallium arsenide and doped polymers.